Majority logic gate with input paraelectric capacitors

ABSTRACT

A new class of logic gates are presented that use non-linear polar material. The logic gates include multi-input majority gates and threshold gates. Input signals in the form of analog, digital, or combination of them are driven to first terminals of non-ferroelectric capacitors. The second terminals of the non-ferroelectric capacitors are coupled to form a majority node. Majority function of the input signals occurs on this node. The majority node is then coupled to a first terminal of a capacitor comprising non-linear polar material. The second terminal of the capacitor provides the output of the logic gate, which can be driven by any suitable logic gate such as a buffer, inverter, NAND gate, NOR gate, etc. Any suitable logic or analog circuit can drive the output and inputs of the majority logic gate. As such, the majority gate of various embodiments can be combined with existing transistor technologies.

CLAIM FOR PRIORITY

This application is a continuation of, and claims the benefit ofpriority to U.S. patent application Ser. No. 16/729,275, filed on Dec.27, 2019, titled “Linear Input and Non-Linear Output Majority LogicGate”, and which is incorporated by reference in entirety.

BACKGROUND

Typical logic gates such as AND gate, OR gate, or a logic gate thatreceives three or more inputs may consist of nine more transistors perlogic gate and many interconnects to connect the various transistors. Asthe number of transistors increases, power consumption also increases.As devices are pushing down the power envelope to save battery power,existing circuit architecture for multi-input logic gates presentchallenges to the goal of lower power consumption.

The background description provided here is for the purpose of generallypresenting the context of the disclosure. Unless otherwise indicatedhere, the material described in this section is not prior art to theclaims in this application and are not admitted to be prior art byinclusion in this section.

BRIEF DESCRIPTION OF THE DRAWINGS

The embodiments of the disclosure will be understood more fully from thedetailed description given below and from the accompanying drawings ofvarious embodiments of the disclosure, which, however, should not betaken to limit the disclosure to the specific embodiments, but are forexplanation and understanding only.

FIG. 1A illustrates a logic gate with a 3-input majority gate, inaccordance with some embodiments.

FIG. 1B illustrates a plot showing characteristics of a ferroelectriccapacitor.

FIG. 1C illustrates plot showing the output of a 3-input majority gate,in accordance with some embodiments.

FIG. 2A illustrates a logic gate with a 3-input threshold gate which canoperate as a AND or OR gate, in accordance with some embodiments.

FIG. 2B illustrates a logic gate with a 5-input majority gate which canoperate as a AND or OR gate with majority function, in accordance withsome embodiments.

FIG. 3A illustrate waveforms showing operation of 3-input majority gateof FIG. 1B.

FIGS. 3B-E illustrate waveforms showing operation of 5-input thresholdgate with different Vbias values, respectively, in accordance with someembodiments.

FIG. 4A illustrates combinational logic including the logic gate of FIG.1B with a 3D (three-dimensional) view of a 3-input majority gate thatcouples to an inverter or buffer, in accordance with some embodiments.

FIG. 4B illustrates combinational logic including the logic gate of FIG.1B with a 3D view of two 3-input majority gates that couple to an inputof a 2-input NAND gate, in accordance with some embodiments.

FIG. 4C illustrates combinational logic including the logic gate of FIG.1B with a 3D view of two 3-input majority gates that couple to an inputof a 2-input NOR gate, in accordance with some embodiments.

FIG. 4D illustrates combinational logic including the logic gate of FIG.1B with a 3D view of multiple 3-input majority gates and regular logicgates that couple to inputs of a multi-input multiplexer, in accordancewith some embodiments.

FIG. 5A illustrates combinational logic including the logic gate of FIG.2A with a 3D view of the 3-input threshold gate that couples to aninverter or buffer, in accordance with some embodiments.

FIG. 5B illustrates combinational logic including the logic gate of FIG.2A with a 3D view of two 3-input threshold gates that couple to an inputof a 2-input NAND gate, in accordance with some embodiments.

FIG. 5C illustrates combinational logic including the logic gate of FIG.2A with a 3D view of two 3-input threshold gates that couple to an inputof a 2-input NOR gate, in accordance with some embodiments.

FIG. 5D illustrates combinational logic including the logic gate of FIG.2A with a 3D view of multiple 3-input threshold gates and regular logicgates that couple to inputs of a multi-input multiplexer, in accordancewith some embodiments.

FIG. 6A illustrates top down layout and corresponding cross-section of a3-input majority gate, respectively, in accordance with someembodiments.

FIG. 6B illustrates top down layout and corresponding cross-section of a3-input threshold gate, respectively, in accordance with someembodiments.

FIG. 7 illustrates a system-on-chip (SOC) that uses the low voltagelogic gates, in accordance with some embodiments.

DETAILED DESCRIPTION

Some embodiments describe a new class of logic gates that use non-linearpolar material. The logic gates include multi-input majority gates andthreshold gates. Input signals in the form of analog, digital, orcombination of them are driven to first terminals of non-ferroelectriccapacitors. The second terminals of the non-ferroelectric capacitors arecoupled to form a majority node. Majority function of the input signalsoccurs on this node. The majority node is then coupled to a firstterminal of a capacitor comprising non-linear polar material. The secondterminal of the capacitor provides the output of the logic gate, whichcan be driven by any suitable logic gate such as a buffer, inverter,NAND gate, NOR gate, etc. Any suitable logic or analog circuit can drivethe output and inputs of the majority logic gate. As such, the majoritygate of various embodiments can be combined with existing transistortechnologies such as complementary metal oxide semiconductor (CMOS),tunneling field effect transistor (TFET), GaAs based transistors,bipolar junction transistors (BJTs), Bi-CMOS transistors, etc.

In some embodiments, an additional fixed or programmable input iscoupled to the majority node via another capacitor. This additionalfixed or programmable input can be a positive or negative bias. The biasbehaves as a threshold or offset added or subtracted to or from thevoltage (or current) on the majority node and determines the final logicvalue of the logic gate. Depending on the polarity of the bias, AND gateor OR logic gate function are realized, in accordance with variousembodiments.

There are many technical effects of the various embodiments. Forexample, extremely compact basic logic gates are formed using thenon-ferroelectric capacitors and a capacitor with non-linear polarmaterial. The non-linear polar material can be ferroelectric material,para-electric material, or non-linear dielectric. The logic gates becomethe basis of adders, multipliers, sequential circuits, and other complexcircuits etc. The majority gate and threshold gate of variousembodiments lowers the power consumption because they do not useswitching transistors and the interconnect routings are much fewer thanthe interconnect routings used in transitional CMOS logic gates. Forexample, 10× fewer interconnect length is used by the majority gate andthreshold gate of various embodiments. The capacitor with non-linearpolar material provides non-volatility that allows for intermittentoperation and zero power drain when not in use.

For example, a processor having such logic gates can enter and exitvarious types of low power states without having to worry about losingdata. Since the capacitor with non-linear polar material can storecharge from low energy devices, the entire processor can operate at muchlower voltage level from the power supply, which reduces overall powerof the processor. Further, very low voltage switching (e.g., 100 mV) ofthe non-linear polar material state allows for low swing signalswitching, which in turn results in low power.

The capacitor with non-linear polar material can be used with any typeof transistor. For example, the capacitor with non-linear polar materialof various embodiments can be used with planar or non-planartransistors. The transistors can be formed in the frontend or backend ofa die. The capacitors with non-linear polar material can be formed inthe frontend or backend of the die. As such, the logic gates can bepacked with high density compared to traditional logic gates. Othertechnical effects will be evident from the various embodiments andfigures.

In the following description, numerous details are discussed to providea more thorough explanation of embodiments of the present disclosure. Itwill be apparent, however, to one skilled in the art, that embodimentsof the present disclosure may be practiced without these specificdetails. In other instances, well-known structures and devices are shownin block diagram form, rather than in detail, in order to avoidobscuring embodiments of the present disclosure.

Note that in the corresponding drawings of the embodiments, signals arerepresented with lines. Some lines may be thicker, to indicate moreconstituent signal paths, and/or have arrows at one or more ends, toindicate primary information flow direction. Such indications are notintended to be limiting. Rather, the lines are used in connection withone or more exemplary embodiments to facilitate easier understanding ofa circuit or a logical unit. Any represented signal, as dictated bydesign needs or preferences, may actually comprise one or more signalsthat may travel in either direction and may be implemented with anysuitable type of signal scheme.

The term “device” may generally refer to an apparatus according to thecontext of the usage of that term. For example, a device may refer to astack of layers or structures, a single structure or layer, a connectionof various structures having active and/or passive elements, etc.Generally, a device is a three-dimensional structure with a plane alongthe x-y direction and a height along the z direction of an x-y-zCartesian coordinate system. The plane of the device may also be theplane of an apparatus, which comprises the device.

Throughout the specification, and in the claims, the term “connected”means a direct connection, such as electrical, mechanical, or magneticconnection between the things that are connected, without anyintermediary devices.

The term “coupled” means a direct or indirect connection, such as adirect electrical, mechanical, or magnetic connection between the thingsthat are connected or an indirect connection, through one or morepassive or active intermediary devices.

The term “adjacent” here generally refers to a position of a thing beingnext to (e.g., immediately next to or close to with one or more thingsbetween them) or adjoining another thing (e.g., abutting it).

The term “circuit” or “module” may refer to one or more passive and/oractive components that are arranged to cooperate with one another toprovide a desired function.

The term “signal” may refer to at least one current signal, voltagesignal, magnetic signal, or data/clock signal. The meaning of “a,” “an,”and “the” include plural references. The meaning of “in” includes “in”and “on.”

Here, the term “analog signal” generally refers to any continuous signalfor which the time varying feature (variable) of the signal is arepresentation of some other time varying quantity, i.e., analogous toanother time varying signal.

Here, the term “digital signal” generally refers to a physical signalthat is a representation of a sequence of discrete values (a quantifieddiscrete-time signal), for example of an arbitrary bit stream, or of adigitized (sampled and analog-to-digital converted) analog signal.

The term “scaling” generally refers to converting a design (schematicand layout) from one process technology to another process technologyand subsequently being reduced in layout area. The term “scaling”generally also refers to downsizing layout and devices within the sametechnology node. The term “scaling” may also refer to adjusting (e.g.,slowing down or speeding up—i.e. scaling down, or scaling uprespectively) of a signal frequency relative to another parameter, forexample, power supply level.

The terms “substantially,” “close,” “approximately,” “near,” and“about,” generally refer to being within +/−10% of a target value. Forexample, unless otherwise specified in the explicit context of theiruse, the terms “substantially equal,” “about equal” and “approximatelyequal” mean that there is no more than incidental variation betweenamong things so described. In the art, such variation is typically nomore than +/−10% of a predetermined target value.

Unless otherwise specified the use of the ordinal adjectives “first,”“second,” and “third,” etc., to describe a common object, merelyindicate that different instances of like objects are being referred to,and are not intended to imply that the objects so described must be in agiven sequence, either temporally, spatially, in ranking or in any othermanner.

For the purposes of the present disclosure, phrases “A and/or B” and “Aor B” mean (A), (B), or (A and B). For the purposes of the presentdisclosure, the phrase “A, B, and/or C” means (A), (B), (C), (A and B),(A and C), (B and C), or (A, B and C).

The terms “left,” “right.” “front,” “back,” “top,” “bottom,” “over,”“under,” and the like in the description and in the claims, if any, areused for descriptive purposes and not necessarily for describingpermanent relative positions. For example, the terms “over,” “under,”“front side,” “back side,” “top,” “bottom,” “over,” “under,” and “on” asused herein refer to a relative position of one component, structure, ormaterial with respect to other referenced components, structures ormaterials within a device, where such physical relationships arenoteworthy. These terms are employed herein for descriptive purposesonly and predominantly within the context of a device z-axis andtherefore may be relative to an orientation of a device. Hence, a firstmaterial “over” a second material in the context of a figure providedherein may also be “under” the second material if the device is orientedupside-down relative to the context of the figure provided. In thecontext of materials, one material disposed over or under another may bedirectly in contact or may have one or more intervening materials.Moreover, one material disposed between two materials may be directly incontact with the two layers or may have one or more intervening layers.In contrast, a first material “on” a second material is in directcontact with that second material. Similar distinctions are to be madein the context of component assemblies.

The term “between” may be employed in the context of the z-axis, x-axisor y-axis of a device. A material that is between two other materialsmay be in contact with one or both of those materials, or it may beseparated from both of the other two materials by one or moreintervening materials. A material “between” two other materials maytherefore be in contact with either of the other two materials, or itmay be coupled to the other two materials through an interveningmaterial. A device that is between two other devices may be directlyconnected to one or both of those devices, or it may be separated fromboth of the other two devices by one or more intervening devices.

Here, multiple non-silicon semiconductor material layers may be stackedwithin a single fin structure. The multiple non-silicon semiconductormaterial layers may include one or more “P-type” layers that aresuitable (e.g., offer higher hole mobility than silicon) for P-typetransistors. The multiple non-silicon semiconductor material layers mayfurther include one or more “N-type” layers that are suitable (e.g.,offer higher electron mobility than silicon) for N-type transistors. Themultiple non-silicon semiconductor material layers may further includeone or more intervening layers separating the N-type from the P-typelayers. The intervening layers may be at least partially sacrificial,for example to allow one or more of a gate, source, or drain to wrapcompletely around a channel region of one or more of the N-type andP-type transistors. The multiple non-silicon semiconductor materiallayers may be fabricated, at least in part, with self-aligned techniquessuch that a stacked CMOS device may include both a high-mobility N-typeand P-type transistor with a footprint of a single FET (field effecttransistor).

Here, the term “backend” generally refers to a section of a die which isopposite of a “frontend” and where an IC (integrated circuit) packagecouples to IC die bumps. For example, high-level metal layers (e.g.,metal layer 6 and above in a ten-metal stack die) and corresponding viasthat are closer to a die package are considered part of the backend ofthe die. Conversely, the term “frontend” generally refers to a sectionof the die that includes the active region (e.g., where transistors arefabricated) and low-level metal layers and corresponding vias that arecloser to the active region (e.g., metal layer 5 and below in theten-metal stack die example).

It is pointed out that those elements of the figures having the samereference numbers (or names) as the elements of any other figure canoperate or function in any manner similar to that described, but are notlimited to such.

FIG. 1A illustrates logic gate 100 with a 3-input majority gate, inaccordance with some embodiments. Logic Gate 100 comprises first,second, and third drivers 101, 102, and 103, respectively. These driverscan be analog drivers generating analog signals or digital driversgenerating signals that toggle between ground and the power supply rail,or a combination of analog or digital drivers. For example, driver 101is a CMOS driver such as a buffer, inverter, a NAND gate, NOR gate,etc., while driver 102 is an amplifier generating a bias signal. Thedrivers provide input signals Vin1 (and current L), Vin2 (and currentI₂), and Vin3 (and current I₃) to the three inputs of 3-input majoritygate 104.

In various embodiments, 3-input majority gate 104 comprises three inputnodes Vin1, Vin2, and Vin3. Here, signal names and node names areinterchangeably used. For example, Vin1 refers to node Vin1 or signalVin1 depending on the context of the sentence. 3-input majority gate 104further comprises capacitors C1, C2, and C3. Here, resistors R1, R2, andR3 are interconnect parasitic resistances coupled to capacitors C1, C2,and C3 respectively. In various embodiments, capacitors C1, C2, and C3are non-ferroelectric capacitors. In some embodiments, thenon-ferroelectric capacitor includes one of: dielectric capacitor,para-electric capacitor, or non-linear dielectric capacitor.

A dielectric capacitor comprises first and second metal plates with adielectric between them. Examples of such dielectrics are: HfO, ABO3perovskites, nitrides, oxy-fluorides, oxides, etc.

A para-electric capacitor comprises first and second metal plates with apara-electric material between them. In some embodiments, f-orbitalmaterials (e.g., lanthanides) are doped to the ferroelectric material tomake paraelectric material. Examples of room temperature paraelectricmaterials include: SrTiO3, Ba(x)Sr(y)TiO3 (where x is −0.05, and y is0.95), HfZrO2, Hf—Si—O, La-substituted PbTiO3, PMN-PT based relaxorferroelectrics.

A dielectric capacitor comprises first and second metal plates withnon-linear dielectric capacitor between them. The range for dielectricconstant is 1.2 to 10000. The capacitors C1, C2, and C3 can beimplemented as MIM (metal-insulator-metal) capacitor technology,transistor gate capacitor, hybrid of metal capacitors or transistorcapacitor.

One terminal of the capacitors C1, C2, and C3 is coupled to a commonnode cn. This common node is coupled to node n1, which is coupled to afirst terminal of a non-linear polar capacitor 105. The majorityfunction is performed at the common node cn, and the resulting voltageis projected on to capacitor 105. For example, the majority function ofthe currents (I₁, I₂, and I₃) on node cn results in a resultant currentthat charges capacitor 105. Table 1 illustrates the majority functionf(Majority Vint, Vin2, Vin3).

TABLE 1 Vin1 Vin2 Vin3 cn (f(Majority Vin1, Vin2, Vin3) 0 0 0 0 0 0 1 00 1 0 0 0 1 1 1 1 0 0 0 1 0 1 1 1 1 0 1 1 1 1 1

A capacitor with FE material (also referred to as a FEC) is a non-linearcapacitor with its potential V_(F)(Q_(F)) as a cubic function of itscharge. FIG. 1B illustrates plot 120 showing characteristics of a FEC.Plot 120 is a charge-voltage (Q-V) plot for a block fPb(Zr_(0.5)Ti_(0.5))O₃ of area (100 nm)² and thickness 20 nm(nanometer). Plot shows local extrema at +/−V_(o) indicated by thedashed lines. Here, the term V_(c) is the coercive voltage. In applyinga potential V across the FEC, its charge can be unambiguously determinedonly for |V|>V_(o). Otherwise, the charge of the FEC is subject tohysteresis effects.

Referring back to FIG. 1A, in some embodiments, N odd number ofcapacitors are coupled to a single FEC to form a majority gate. In thiscase, N=3. The measured charge on the FEC (Q_(F)) is the output of themajority gate. Solving for a steady-state solution, the parasiticresistors are ignore and the input potentials V_(i) (or Vin) are assumedto be constant. In this case, the charge across each linear capacitor(C1, C2, C3) is:Q _(i) =C _(i)·(V _(i) −V _(F))  (1)

The charge summed at node Cn and across FEC 105 is express as:

$\begin{matrix}{Q_{F} = {\sum\limits_{i}Q_{i}}} & (2)\end{matrix}$ $\begin{matrix}{Q_{F} = {{\sum\limits_{i}{C_{i}V_{i}}} - {\sum\limits_{i}{C_{i}V_{F}}}}} & (3)\end{matrix}$ $\begin{matrix}{Q_{F} = {{\sum\limits_{i}{C_{i}V_{i}}} - {C{V_{F}\left( Q_{F} \right)}}}} & (4)\end{matrix}$ $\begin{matrix}{{V_{F}\left( Q_{F} \right)} = {{\sum\limits_{i}{\frac{C_{i}}{C}V_{i}}} - \frac{Q_{F}}{C}}} & (5)\end{matrix}$

Here, C=Σ_(i)C_(i) is the sum of the capacitances. In the limit, C

, the following is achieved:

$\begin{matrix}{{V_{F}\left( Q_{F} \right)} = {{\sum\limits_{i}{\frac{C_{i}}{C}V_{i}}} = \overset{\_}{V}}} & (6)\end{matrix}$

The potential across FEC 105 is the average of all the input potentialsweighted by the capacitances (e.g., C1, C2, and C3).

When C_(i)=C/N are all equal, V_(F) is just a simple mean. To ensurethat

$\begin{matrix}{Q_{F} = {V_{F}^{- 1}\left( \overset{\_}{V} \right)}} & (7)\end{matrix}$

is well defined, all possible values of V have magnitudes greater thanV_(c), the coercive potential. Assuming binary input of +/−V_(s), thepotential with the smallest magnitude is:V=V _(s) /N  (8)

This occurs when (N+1)/2 of the inputs are +V_(s) and (N−1)/2 are−V_(s). Then,V _(s) >NV _(c)  (9)

The output of the majority gate at node n1 is expressed by FIG. 1C. FIG.1C illustrates plot 130 showing the output of a 3-input majority gate,in accordance with some embodiments.

As an example, for N=3, the possible inputs are:V∈{−3/3V _(s),−⅓V _(s),+⅓V _(s),+3/3V _(s)}  (10)

Referring back to FIG. 1A, since capacitor 105 is a non-linear polarcapacitor, both of its terminals of the capacitor are pre-discharged toground or to a known predetermined voltage via transistors MN1 and MN2.The predetermined voltage can be programmable. The pre-determinedvoltage can be positive or negative. In some embodiments, p-typetransistors are provided to pre-charge both terminals of capacitor 105to a supply voltage or another predetermined voltage. The predeterminedvoltage can be programmable. The pre-determined voltage can be positiveor negative. In some embodiments, the pre-charge or pre-discharge of theterminals of capacitor 105 (or nodes cn and n1) is done periodically bya clock signal Clk. The control can be a non-clock signal that isgenerated by a control logic (not shown). For example, the control canbe issued every predetermined or programmable time. In some embodiments,both transistors MN1 and MN2 receive the same clock signal (e.g., Clk1).In some embodiments, transistors MN1 receives Clk1 and MN2 receivedClk2, where Clk2 is different from Clk1. For example, Clk2 is phaseshifted relative to Clk1. In some embodiments, one transistor is used topre-charge or pre-discharge both terminals of capacitor 105. Forexample, drain terminal of transistor MN1 is coupled to both terminalsof capacitor 105, and transistor MN2 is not used (and removed).

In some embodiments, the non-linear polar material of capacitor 105includes one of: ferroelectric (FE) material, para-electric material, ornon-linear dielectric. In various embodiments, para-electric material isthe same as FE material but with chemical doping of the activeferroelectric ion by an ion with no polar distortion. In some cases, thenon-polar ions are non-s orbital ions formed with p, d, f externalorbitals. In some embodiments, non-linear dielectric are the same aspara-electric materials, relaxors, and dipolar glasses.

In some embodiments, f-orbital materials (e.g., lanthanides) are dopedto the ferroelectric material to make paraelectric material. Examples ofroom temperature paraelectric material include: BaTiO3, Ba(x)Sr(y)TiO3(where x is −0.5, and y is 0.95).

In various embodiments, the FE material can be any suitable low voltageFE material that allows the FE material to switch its state by a lowvoltage (e.g., 100 mV). In some embodiments, the FE material comprises aperovskite of the type ABO₃, where ‘A’ and B′ are two cations ofdifferent sizes, and ‘O’ is oxygen which is an anion that bonds to boththe cations. Generally, the size of atoms of A is larger than the sizeof B atoms. In some embodiments, the perovskite can be doped (e.g., byLa or Lanthanides). Perovskites can be suitably doped to achieve aspontaneous distortion in a range of 0.3 to 2%. For example, forchemically substituted lead titanate such as Zr in Ti site; La, Nb in Tisite, the concentration of these substitutes is such that it achievesthe spontaneous distortion in the range of 0.3 to 2%. For chemicallysubstituted BiFeO3, BiCrO3, BiCoO3 class of materials, La or rate earthsubstitution into the Bi site can tune the spontaneous distortion. Insome embodiments, the F materials include: SrTiO3, Ba(x)Sr(y)TiO3 (wherex is −0.05, and y is 0.95), HfZrO2, Hf—Si—O, La-substituted PbTiO3,PMN-PT based relaxor ferroelectrics.

In some embodiments, the FE material comprises a stack of layersincluding low voltage FE material between (or sandwiched between)conductive oxides. In various embodiments, when FE material is aperovskite, the conductive oxides are of the type AA′BB′O₃. A′ is adopant for atomic site A, it can be an element from the Lanthanidesseries. B′ is a dopant for atomic site B, it can be an element from thetransition metal elements especially Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu,Zn. A′ may have the same valency of site A, with a differentferroelectric polarizability.

In some embodiments, the FE material comprises hexagonal ferroelectricsof the type h-RMnO3, where R is a rare earth element viz. cerium (Ce),dysprosium (Dy), erbium (Er), europium (Eu), gadolinium (Gd), holmium(Ho), lanthanum (La), lutetium (Lu), neodymium (Nd), praseodymium (Pr),promethium (Pm), samarium (Sm), scandium (Sc), terbium (Tb), thulium(Tm), ytterbium (Yb), and yttrium (Y). The ferroelectric phase ischaracterized by a buckling of the layered MnO5 polyhedra, accompaniedby displacements of the Y ions, which lead to a net electricpolarization. In some embodiments, hexagonal FE includes one of: YMnO3or LuFeO3. In various embodiments, when the FE material compriseshexagonal ferroelectrics, the conductive oxides adjacent to the FEmaterial are of A2O3 (e.g., In2O3, Fe2O3) and ABO3 type, where ‘A’ is arare earth element and B is Mn.

In some embodiments, the FE material comprises improper FE material. Animproper ferroelectric is a ferroelectric where the primary orderparameter is an order mechanism such as strain or buckling of the atomicorder. Examples of improper FE material are LuFeO3 class of materials orsuper lattice of ferroelectric and paraelectric materials PbTiO3 (PTO)and SnTiO3 (STO), respectively, and LaAlO3 (LAO) and STO, respectively.For example, a super lattice of [PTO/STO]n or [LAO/STO]n, where ‘n’ isbetween 1 to 100. While various embodiments here are described withreference to ferroelectric material for storing the charge state, theembodiments are also applicable for paraelectric material. For example,the capacitor of various embodiments can be formed using paraelectricmaterial instead of ferroelectric material.

In some embodiments, the FE material includes one of: Hafnium (Hf),Zirconium (Zr), Aluminum (Al), Silicon (Si), their oxides or theiralloyed oxides. In some embodiments, FE material includes one of:Al(1−x)Sc(x)N, Ga(1−x)Sc(x)N, Al(1−x)Y(x)N or Al(1−x−y)Mg(x)Nb(y)N, ydoped HfO2, where x includes one of: Al, Ca, Ce, Dy, Er, Gd, Ge, La, Sc,Si, Sr, Sn, or Y, wherein ‘x’ is a fraction. In some embodiments, FEmaterial includes Bismuth ferrite (BFO), lead zirconate titanate (PZT),BFO with doping material, or PZT with doping material, wherein thedoping material is one of Nb or La; and relaxor FE such as PMN-PT.

In some embodiments, the FE material includes Bismuth ferrite (BFO), BFOwith a doping material where in the doping material is one of Lanthanum,or any element from the lanthanide series of the periodic table. In someembodiments, the FE material includes lead zirconium titanate (PZT), orPZT with a doping material, wherein the doping material is one of La,Nb. In some embodiments, the FE material includes a relaxorferro-electric includes one of lead magnesium niobate (PMN), leadmagnesium niobate-lead titanate (PMN-PT), lead lanthanum zirconatetitanate (PLZT), lead scandium niobate (PSN), Barium Titanium-BismuthZinc Niobium Tantalum (BT-BZNT), Barium Titanium-Barium StrontiumTitanium (BT-BST).

In some embodiments, the FE material includes Hafnium oxides of theform, Hf1−x Ex Oy where E can be Al, Ca, Ce, Dy, er, Gd, Ge, La, Sc, Si,Sr, Sn, or Y. In some embodiments, the FE material includes Niobate typecompounds LiNbO3, LiTaO3, Lithium iron Tantalum Oxy Fluoride, BariumStrontium Niobate, Sodium Barium Niobate, or Potassium strontiumniobate.

Threshold in the FE material has a highly non-linear transfer functionin the polarization vs. voltage response. The threshold is related to a)non-linearity of switching transfer function, and b) the squareness ofthe FE switching. The non-linearity of switching transfer function isthe width of the derivative of the polarization vs. voltage plot. Thesquareness is defined by the ratio of the remnant polarization to thesaturation polarization; perfect squareness will show a value of 1.

The squareness of the FE switching can be suitably manipulated withchemical substitution. For example, in PbTiO3 a P-E(polarization-electric field) square loop can be modified by La or Nbsubstitution to create a S-shaped loop. The shape can be systematicallytuned to ultimately yield a non-linear dielectric. The squareness of theFE switching can also be changed by the granularity of the FE layer. Aperfectly epitaxial, single crystalline FE layer will show highersquareness (e.g., ratio is closer to 1) compared to a poly crystallineFE. This perfectly epitaxial can be accomplished by the use of latticematched bottom and top electrodes. In one example, BiFeO (BFO) can beepitaxially synthesized using a lattice matched SrRuO3 bottom electrodeyielding P-E loops that are square. Progressive doping with La willreduce the squareness.

In some embodiments, the FE material comprises multiple layers. Forexample, alternating layers of [Bi2O2]2+, and pseudo-perovskite blocks(Bi4Ti3O12 and related Aurivillius phases), with perovskite layers thatare n octahedral layers in thickness can be used.

In some embodiments, the FE material comprises organic material. Forexample, Polyvinylidene fluoride or polyvinylidene difluoride (PVDF).

The FE material is between two electrodes. These electrodes areconducting electrodes. In some embodiments, the electrodes areperovskite templated conductors. In such a templated structure, a thinlayer (e.g., approximately 10 nm) of a perovskite conductor (such asSrRuO3) is coated on top of IrO2, RuO2, PdO2, or PtO2 (which have anon-perovskite structure but higher conductivity) to provide a seed ortemplate for the growth of pure perovskite ferroelectric at lowtemperatures. In some embodiments, when the ferroelectric compriseshexagonal ferroelectric material, the electrodes can have hexagonalmetals, spinels, or cubic metals. Examples of hexagonal metals include:PtCoO2, PdCoO2, and other delafossite structured hexagonal metallicoxides such as Al-doped ZnO. Examples of spinels include Fe3O4 andLiV2O4. Examples of cubic metals include Indium Tin Oxide (ITO) such asSn-doped In2O3.

The charge developed on node n1 produces a voltage and current that isthe output of the majority gate 104. Any suitable driver 106 can drivethis output. For example, a non-FE logic, FE logic, CMOS logic, BJTlogic, etc. can be used to drive the output to a downstream logic.Examples of the drivers include inverters, buffers, NAND gates, NORgates, XOR gates, amplifiers, comparators, digital-to-analog converters,analog-to-digital converters, etc. In various embodiments, majority gate104 coupled to inverter 106 forms a minority gate (majority-invert),resulting in a universal logic gate.

While FIG. 1B illustrates a 3-input majority gate, the same concept canbe extended to more than three inputs to make an N-input majority gate,where N is greater than two.

FIG. 2A illustrates logic gate 200 with a 3-input threshold gate 204which can operate as an AND or OR gate, in accordance with someembodiments. Logic gate is similar to logic gate 100 but for removingthe third input Vin and adding an input Vbias. This additional inputbias makes the logic gate a threshold gate 204. Threshold gate 204 isreferred to as a 3-input threshold gate because of the three inputsVin1, Vin2, and Vbias. It can also be referred to as 2-input thresholdgate if the Vbias input is not counted as a separate input. In variousembodiments, threshold gate 204 comprises an additional capacitor Cbiasthat has one terminal coupled to node cn and another terminal coupled toVbias. The material for capacitor Cbias can be the same as the materialfor capacitors C1, C2, and C3. For example, capacitor Cbias comprisesnon-ferroelectric material.

Vbias can be positive or negative voltage depending on the desired logicfunction of threshold gate 204. Any suitable source can generate Vbias.For example, a bandgap reference generator, a voltage divider such as aresistor divider, a digital to analog converter (DAC), etc. can generateVbias. Vbias can be fixed or programmable (or adjustable). For example,Vbias can be adjusted by hardware (e.g., fuses, register), or software(e.g., operating system). In some embodiments, when Vbias is positive,the majority function on node cn is an OR function. For example, thefunction at node cn is OR(Vin1, Vin2, 0). In some embodiments, whenVbias is negative, the majority function on node cn is an AND function.For example, the function at node cn is AND(Vin1, Vin2, 1). Table 2 andTable 3 summarizes the function of threshold gate 204.

TABLE 2 Vin1 Vin2 Vbias cn OR(Vin1, Vin2, Vbias) 0 0 positive 0 0 1positive 1 1 0 positive 1 1 1 positive 1

TABLE 3 Vin1 Vin2 Vbias cn AND(Vin1, Vin2, Vbias) 0 0 negative 0 0 1negative 0 1 0 negative 0 1 1 negative 1

Compared to transitional CMOS AND logic gate and OR logic gate, here theAND function and OR function are performed by a network of capacitors.The output of the majority or threshold function on node cn is thenstored in the non-linear polar capacitor 105. This capacitor providesthe final state of the logic in a non-volatile form. As such, the logicgate of various embodiments describes a non-volatile multi-input AND orOR gate with one or two transistors for pre-discharging or pre-chargingnodes cn and n1. The silicon area of the AND or OR gates of variousembodiments is orders of magnitude smaller than traditional AND or ORgates. While FIG. 2A illustrates a 3-input threshold gate, the sameconcept can be extended to more than 3 inputs to make an N-inputthreshold gate, where N is greater than 2 and an odd number.

FIG. 2B illustrates logic gate 220 with a 5-input AND/OR majority gate222 which can operate as a AND or OR gate with majority function, inaccordance with some embodiments. For purposes of explaining the 5-inputAND/OR majority gate 222, consider the capacitances to beCbias=C3=C4=C/2, C1=C, and C2=C with corresponding input potentials:Vbias=V_(β), Vin3=V_(A), Vin4=V_(B), Vin1=V_(C), and Vin2=V_(s), whereV_(β)=−V_(o) is a constant bias voltage and the rest are binary inputvoltages of +/−V_(o) for some yet to be determined V_(o). Gate 222 has afunction of (A AND B, C, S). Here, the AND gate function is absorbedinto the majority gate at the cost of a bias voltage.

If both V_(S)=V_(C)=+V_(o), then regardless of V_(A), V_(B), it isdesired that the output is greater than V_(c) in magnitude, the coercivevoltage. For V_(A)=V_(B)=−V₀, the average potential is expressed as:

$\begin{matrix}{V_{F} = \frac{{{C \cdot 2}V_{o}} - {C/{2 \cdot 2}V_{o}} - {{V_{o.} \cdot C}/2}}{3.5C}} & (11)\end{matrix}$ $\begin{matrix}{V_{F} = {{\frac{1}{7}V_{o}} > {V_{c} \cdot 4}}} & (12)\end{matrix}$

If V_(A)=V_(B)=+V₀ and V_(c)=V_(d)=−V_(o), the following is achieved:

$\begin{matrix}{V_{F} = \frac{{{{- C} \cdot 2}V_{o}} + {C/{2 \cdot 2}V_{o}} - {{V_{o.} \cdot C}/2}}{3.5C}} & (13)\end{matrix}$ $\begin{matrix}{V_{F} = {{{- \frac{1}{7}}V_{o}} < {{- V_{c}} \cdot 4}}} & (14)\end{matrix}$

To check the equivalence to an AND operation, considerV_(A)=−V_(B)=V_(o), then

$\begin{matrix}{V_{F} = \frac{V_{A} + V_{B} - V_{o}}{3.5C}} & (15)\end{matrix}$ $\begin{matrix}{V_{F} = {\in \left\{ {{{- \frac{3}{7}}V_{o}},{{- \frac{1}{7}}V_{o}},{\frac{1}{7}V_{o}}} \right\}}} & (16)\end{matrix}$

As designed, merely when V_(A)=V_(B)=+V_(O), gate 222 produces apositive output. It is further observed that all outputs are greaterthan V_(C) by setting V_(o)>7V_(c), in accordance with some embodiments.

Here, AND function is performed between Vin3 and Vin4, and the resultingoutput is used to perform majority function with Vin1 and Vin2, which isdescribed as: Majority (Vin3 AND Vin4, Vin1, Vin2). Table 4 illustratesthe truth table of AND majority gate 222.

TABLE 4 Vin3 Vin4 Vbias cn AND(Vin1, AND Vin2, Vin3, Vin1 Vin2 FunctionVin4, Vbias) 0 0 0 0 negative 0 0 0 0 1 negative 0 0 0 1 0 negative 0 00 1 1 negative 0 0 1 0 0 negative 0 0 1 0 1 negative 0 0 1 1 0 negative0 0 1 1 1 negative 1 1 0 0 0 negative 0 1 0 0 1 negative 0 1 0 1 0negative 0 1 0 1 1 negative 1 1 1 0 0 negative 1 1 1 0 1 negative 1 1 11 0 negative 1 1 1 1 1 negative 1

In the OR majority function case, OR function is performed between Vin3and Vin4, and the resulting output is used to perform majority functionwith Vin1 and Vin2, which is describe as: Majority (Vin3 OR Vin4, Vin1,Vin2). Table 5 illustrates the truth table of OR majority gate 222.

TABLE 5 Vin3 Vin4 Vbias cn OR(Vin1, OR Vin2, Vin3, Vin1 Vin2 FunctionVin4, Vbias) 0 0 0 0 positive 0 0 0 0 1 positive 0 0 0 1 0 positive 0 00 1 1 positive 0 0 1 0 0 positive 0 0 1 0 1 positive 1 0 1 1 0 positive1 0 1 1 1 positive 1 1 0 0 0 positive 0 1 0 0 1 positive 1 1 0 1 0positive 1 1 0 1 1 positive 1 1 1 0 0 positive 1 1 1 0 1 positive 1 1 11 0 positive 1 1 1 1 1 positive 1

Logic gate 222 can perform AND majority and OR majority functionsdepending on the bias value for Vbias. Here, merely two transistors (MN1and MN2) that can be condensed to a single transistor for pre-chargingor pre-discharging nodes cn and n1, are used while a complex function ofAND majority and OR majority are realized.

In various embodiments, majority gate 222 coupled to inverter 106 formsa minority threshold gate (majority-invert threshold), resulting in auniversal logic gate.

FIG. 3A illustrates waveforms 300 showing operation of 3-input majoritygate of FIG. 1B, respectively, in accordance with some embodiments. FIG.3A illustrates a majority function of inputs Vin1, Vin2, and Vin3.

FIGS. 3B-E illustrate waveforms 320, 330, 340, and 350 showing operationof 5-input threshold gate with different Vbias values, respectively, inaccordance with some embodiments.

FIG. 4A illustrates combination logic 400 which includes logic gate ofFIG. 1B with a 3D (three-dimensional) view of the 3-input majority gatethat couples to an inverter or buffer, in accordance with someembodiments. In this example, capacitors C1 (401), C2 (402), and C3(403) are MIM capacitors that receive inputs Vin1, Vin2, and Vin3,respectively, on their first terminals from buffers or drivers 101, 102,and 103, respectively. However, other types of capacitors can be used.For example, hybrid of metal and transistor can be used to implement thecapacitor. The second terminals of capacitors C1 (401), C2 (402), and C3(403) are coupled to common node interconnect 404. The output of drivers101, 102, and 103 are Vin1 d, Vin2 d, and Vin3 d, respectively.Interconnect 404 can be on any suitable metal layer. In someembodiments, interconnect 404 comprises a material which includes one ormore of: Cu, Al, Ag, Au, Co, or W. In some embodiments, capacitors C1(401), C2 (402), and C3 (403) are formed in the backend of the die. Insome embodiments, capacitors C1 (401), C2 (402), and C3 (403) are formedin the frontend of the die. Interconnect 404 is coupled to a firstterminal of non-linear polar capacitor 105. In this example, capacitor105 comprises ferroelectric material and hence labeled as C_(FE).However, other non-linear polar material described herein can be used tofabricate capacitor 105. The second terminal of capacitor 105 is coupledto node n1.

In some embodiments, capacitor 105 is a pillar capacitor. A pillarcapacitor is taller than its width and allows for compact layout in thez-direction. In one embodiment, capacitors C1 (401), C2 (402), and C3(403) are fabricated below or under pillar capacitor forming a verticalmajority gate 104.

FIG. 4B illustrates combinational logic 420 having logic gate of FIG. 1Bwith a 3D view of two 3-input majority gates that couple to an input ofa 2-input NAND gate, in accordance with some embodiments. In thisexample, two majority gates provide inputs to NAND gate 425. The firstmajority gate comprises capacitors C1 a (401 a), C2 a (402 a), and C3 a(403 a) coupled to node 401 a, and capacitor 105 a coupled to node 404 aand node n1 a. Node n1 a is coupled to the first input of NAND gate 425.Inputs to capacitors C1 a (401 a), C2 a (402 a), and C3 a (403 a) maycome from same drivers or different drivers. Input to drivers 101 a, 102a, and 103 a are Vin1, Vin2, and Vin3, respectively. The output ofdrivers 101 a, 102 a, and 103 a are Vin1 d, Vin2 d, and Vin3 d,respectively. Transistors MN1 a and MN2 a pre-discharge nodes 404 a andn1 a. As described herein, one transistor can be used to pre-dischargenodes 401 a and n1 a instead of two transistors. In some embodiments,transistors MN1 a and MN1 a are controlled by Clk1 a and Clk2 a,respectively. Here, Clk2 a can be same as Clk1 a or different. Forexample, Clk2 a is phase shifted relative to Clk1 a. Capacitor 105 a isa non-linear polar capacitor, which may comprises one of: ferroelectricmaterial, para-electric material, and non-linear dielectric.

The second majority gate comprises capacitors C1 b (401 b), C2 b (402b), and C3 b (403 b) coupled to node 401 b, and capacitor 105 b coupledto node 404 b and node n1 b. Node n1 b is coupled to the second input ofNAND gate 425. Inputs to capacitors C1 b (401 b), C2 a (402 b), and C3 a(403 b) may come from same drivers or different drivers. Input todrivers 101 b, 102 b, and 103 b are Vin4, Vin5, and Vin6, respectively.The output of drivers 101 b, 102 b, and 103 b are Vin4 d, Vin5 d, andVin6 d, respectively. Transistors MN1 b and MN2 b pre-discharge nodes404 b and n1 b. As described herein, one transistor can be used topre-discharge nodes 401 b and n1 b instead of two transistors. In someembodiments, the transistors MN1 b and MN1 b are controlled by Clk1 band Clk2 b, respectively. Here, Clk2 b can be same as Clk1 b ordifferent. For example, Clk2 b is phase shifted relative to Clk1 b.Capacitor 105 b is a non-linear polar capacitor, which may comprises oneof: ferroelectric material, para-electric material, and non-lineardielectric.

In some embodiments, transistors for pre-charging or discharging nodes404 a, 404 b, n1 a, and n1 b are shared between the majority gates. Insome embodiments, one transistor pre-charging or discharging nodes 404a, 404 b, n1 a, and n1 b are shared between the majority gates. As such,further layout and power reduction is achieved. While each capacitor isshown associated with an independent driver, one driver can drivemultiple capacitors of the same or different majority gates.

FIG. 4C illustrates combinational logic 430 having logic gate of FIG. 1Bwith a 3D view of two 3-input majority gates that couple to an input ofa 2-input NOR gate, in accordance with some embodiments. Logic gate 430is similar to logic gate 420 but for replacing the NAND gate 425 withNOR gate 435. Other logic gates instead of NOR gate 435 can be used. Forexample, XOR gate, XNOR gate, or any other suitable gate can be used fordriving the outputs n1 a and n1 b.

FIG. 4D illustrates combinational logic 440 having logic gate of FIG. 1Bwith a 3D view of multiple 3-input majority gates and regular logicgates that couple to inputs of a multi-input multiplexer, in accordancewith some embodiments. Compared to FIG. 4A, here the output driver is an:1 multiplexer 445. The inputs of multiplexer 445 are coupled tomajority gates described with reference to FIGS. 4A-B, other majoritygates (MG) 446, threshold gates, traditional combinational logic (CL)447. As such, an architecture that mixes different logic technologiescan be used together and selectable using the select signal.

FIG. 5A illustrates combinational logic 500 having a simplified versionof the logic gate of FIG. 2A with a 3D view of the 3-input thresholdgate that couples to an inverter or buffer, in accordance with someembodiments. Here, 3-input threshold gate 204 is similar to majoritygate of FIG. 4A but for removing capacitor C3 and its associated inputand adding an extra capacitor 501 Cbias which is biased by Vbias. Vbiascan be positive or negative. The various embodiments described withreference to FIG. 2 and FIG. 4A are applicable here.

FIG. 5B illustrates combinational logic 520 having a simplified versionof the logic gate of FIG. 2A with a 3D view of two 3-input thresholdgates that couple to an input of a 2-input NAND gate, in accordance withsome embodiments. Here, the two 3-input threshold gates of FIG. 4B arereplaced with two 3-input threshold gates. Each threshold gate has itsassociated capacitor 501. For example, the first threshold gate hascapacitor 501 a coupled to Vbias1, while the second threshold gate hascapacitor 501 b coupled to Vbias2. Vbias1 and Vbias2 can be the same ordifferent values depending on the desired logic. The various embodimentsdescribed with reference to FIG. 2A and FIG. 4B are applicable here.

FIG. 5C illustrates combinational logic 530 having a simplified versionof the logic gate of FIG. 2A with a 3D view of two 3-input thresholdgates that couple to an input of a 2-input NOR gate, in accordance withsome embodiments. Here, the two 3-input threshold gates of FIG. 4B arereplaced with two 3-input threshold gates. Each threshold gate has itsassociated capacitor 501. For example, the first threshold gate hascapacitor 501 a coupled to Vbias1, while the second threshold gate hascapacitor 501 b coupled to Vbias2. Vbias1 and Vbias2 can be the same ordifferent values depending on the desired logic. The various embodimentsdescribed with reference to FIG. 2A and FIG. 4C are applicable here.

FIG. 5D illustrates combinational logic 540 having a simplified versionof the logic gate of FIG. 2B with a 3D view of multiple 3-inputthreshold gates and regular logic gates that couple to inputs of amulti-input multiplexer, in accordance with some embodiments. Comparedto FIG. 5A, here the output driver is a n:1 multiplexer 445. The inputsof multiplexer 445 are coupled to threshold gates described withreference to FIGS. 5A-B, other majority gates (MG) 446, threshold gates,traditional combinational logic (CL) 447. As such, an architecture thatmixes different logic technologies can be used together and selectableusing the select signal.

FIG. 6A illustrates top-down layout 600 and corresponding cross-section610 of a 3-input majority gate, respectively, in accordance with someembodiments. Layout 600 illustrates a compact layout of 3-input majoritygate with a pitch of two minimum sized transistors MN1 and MN2. In someembodiments, Non-ferroelectric capacitors C1, C2, and C3, and non-linearpolar capacitor (FE cap) are positioned in the same set of layers. Forexample. non-ferroelectric capacitors C1, C2, and C3, and non-linearpolar capacitor (FE cap) are positioned in the place of via for metallayer 1 (M1) to metal layer 2 (M2).

In some embodiments, Non-ferroelectric capacitors C1, C2, and C3, andnon-linear polar capacitor (FE cap) are positioned in different set oflayers. For example, FE cap is formed above or below capacitors C1, C2,and C3.

Transistors M1 and M2 are in the frontend of the die. Inputs Vint, Vin2,and Vin3 are on M2. Common node cn (also referred to as chargeintegration layer or node) is on M1 while node n1 is on M2. The chargenode cn can be shared by linear capacitors (C1, C2, C3) and/ornon-linear polar capacitor 104. The charge node cn has one or moretransistor coupled to ground or another predetermined voltage node.While non-ferroelectric capacitors C1, C2, and C3, and non-linear polarcapacitor (FE cap) are positioned in location of M1-via-M2, then can befurther located in the backend of the die. For example,non-ferroelectric capacitors C1, C2, and C3, and non-linear polarcapacitor (FE cap) can be positioned in M4-via-M5 or higher. As such,lower metal layers are freed up for routing of other signals.

Transistors MN1 and/or MN2 can be a planar or non-planar transistors. Insome embodiments, transistors MN1 and/or MN2 can be formed in thefrontend or backend. In some embodiments, MN1 and/or MN2 are stackedtransistors. In some embodiments, one or more of non-ferroelectriccapacitors C1, C2, and C3, and non-linear polar capacitor (FE cap) areformed in the frontend or backend. While transistors MN1 and MN2 areillustrated as n-type transistors, they can be replaced with p-typetransistors. In that case, nodes cn and n1 are pre-charged to apredetermined or programmable voltage. The transistors here can beSquare Wire, Rectangular Ribbon Transistors, Gate All Around CylindricalTransistors, Tunneling FETs (TFET), ferroelectric FETs (FeFETs),bi-polar transistors (BJT), BiCMOS, or other devices implementingtransistors functionality, for instance, carbon nanotubes or spintronicdevices. In some embodiments, the transistors are typical metal oxidesemiconductor (MOS) transistors or their derivative including Tri-Gateand FinFET transistors. While MOSFET have symmetrical source and drainterminals, TFET device has asymmetric source and drain terminals.

Transistors MN1 and MN2 are formed in/on substrate 601, and comprisesrespective source 602, drain 603, channel region 604, source contact 608a, drain contact 608 b, and gate comprising gate dielectric 605, gateliners 606 a and 606 b; gate metal 607.

Substrate 601 includes a suitable semiconductor material such as: singlecrystal silicon, polycrystalline silicon and silicon on insulator (SOI).In one embodiment, substrate 101 includes other semiconductor materialssuch as: Si, Ge, SiGe, or a suitable group III-V or group III-Ncompound. The substrate 101 may also include semiconductor materials,metals, dopants, and other materials commonly found in semiconductorsubstrates.

In some embodiments, source region 602 and drain region 603 for eachtransistor are formed within substrate 601 adjacent to the gate stack ofthe transistor. The source region 602 and drain region 603 are generallyformed using either an etching/deposition process or animplantation/diffusion process.

In the etching/deposition process, substrate 601 may first be etched toform recesses at the locations of the source 602 and drain 603 regions.An epitaxial deposition process may then be carried out to fill therecesses with material that is used to fabricate the source region 602and drain region 603. In the implantation/diffusion process, dopantssuch as boron, aluminum, antimony, phosphorous, or arsenic may beion-implanted into the substrate to form the source region 602 and drainregion 603. An annealing process that activates the dopants and causesthem to diffuse further into substrate 601 typically follows theion-implantation process.

In some embodiments, one or more layers of metal and/or metal alloys areused to form the source region 602 and drain region 603. In someembodiments, source region 602 and drain region 603 are formed using oneor more alternate semiconductor materials such as germanium or asuitable group III-V compound. In some embodiments, source region 602and drain region 603 are fabricated using a silicon alloy such assilicon germanium or silicon carbide. In some embodiments, theepitaxially deposited silicon alloy is doped in-situ with dopants suchas boron, arsenic, or phosphorous.

The semiconductor material for channel region 604 may have the samematerial as substrate 601, in accordance with some embodiments. In someembodiments, channel region 604 includes one of: Si, SiGe, Ge, and GaAs.

The gate dielectric layer 605 may include one layer or a stack oflayers. The one or more layers may include high-k dielectric material,silicon oxide, and/or silicon dioxide (SiO₂). The high-k dielectricmaterial may include elements such as: zinc, niobium, scandium, leanyttrium, hafnium, silicon, strontium, oxygen, barium, titanium,zirconium, tantalum, aluminum, and lanthanum. Examples of high-kmaterials that may be used in the gate dielectric layer include: leadzinc niobate, hafnium oxide, lead scandium tantalum oxide, hafniumsilicon oxide, yttrium oxide, aluminum oxide, lanthanum oxide, bariumstrontium titanium oxide, lanthanum aluminum oxide, titanium oxide,zirconium oxide, tantalum oxide, and zirconium silicon oxide. In someembodiments, when a high-k material is used, an annealing process isused on the gate dielectric layer 605 to improve its quality.

In some embodiments, a pair of liner layers (sidewall liners) 606 a/bare formed on opposing sides of the gate stack that bracket the gatestack. The pair of liner layers 606 a/b are formed from a material suchas: silicon oxynitride, silicon nitride, silicon nitride doped withcarbon, or silicon carbide. Processes for forming sidewall liners arewell-known in the art and generally include deposition and etchingprocess operations. In some embodiments, a plurality of liner pairs maybe used. For example, two pairs, three pairs, or four pairs of sidewallliners may be formed on opposing sides of the gate stack.

Gate metal layer 607 may comprise at least one P-type work-functionmetal or N-type work-function metal, depending on whether the transistoris to be a p-type or an n-type transistor. Gate metal layer 607 maycomprise a stack of two or more metal layers, where one or more metallayers are work-function metal layers and at least one metal layer is aconductive fill layer.

For an n-type transistor, metals that may be used for the gate metallayer 607 include: aluminum carbide, tantalum carbide, zirconiumcarbide, and hafnium carbide. In some embodiments, metal for gate metallayer 607 for n-type transistor include: aluminum, hafnium, zirconium,titanium, tantalum, and their alloys. An n-type metal layer will enablethe formation of an n-type gate metal layer 607 with a work functionthat is between about 3.9 eV and about 4.2 eV. In some embodiments,metal of layer 607 includes one of: TiN, TiSiN, TaN, Cu, Al, Au, W,TiSiN, or Co. In some embodiments, metal of layer 107 includes one ormore of: Ti, N, Si, Ta, Cu, Al, Au, W, or Co.

For a p-type transistor, metals that are used for gate metal layer 607include, but are not limited to, ruthenium, palladium, platinum, cobalt,nickel, and conductive metal oxides. An example of conductive oxideincludes ruthenium oxide. A p-type metal layer will enable the formationof a p-type gate metal layer 607 with a work function that is betweenabout 4.9 eV and about 5.2 eV.

Any suitable material can be used for drain and source contacts 608 a/band via 609 a/b. For example, one or more of Ti, N, Si, Ta, Cu, Al, Au,W, or Co can be used for drain and source contacts 608 a/b and via 609a/b. The gate electrodes 607 may be connected to Clk1 and CLk2 directlyor through vias and metal layers 616 and 617, respectively. Node n1 isconnected to another logic. Drivers (not shown) drive signals on nodesVin1, Vin, and Vin3.

FIG. 6B illustrate top-down layout 620 and corresponding cross-section660 of a 3-input threshold gate, respectively, in accordance with someembodiments. FIG. 6B is similar to FIG. 6A but for replacing Vin3 withVbias and replacing C3 with Cbias.

The cross-sections of FIGS. 6A-B, are fabricated using a sequencedsemiconductor metal processing. This process comprises forming gatedsemiconductor devices for example, FinFET, nanowire FETs, TFETs, etc.The functional polar material (e.g., C1, C2. C3. FE Cap), lineardielectrics, non-linear dielectrics, FE, para-electrics, are insertedinto one of via0, via1, via2, etc. In some embodiments, the functionalpolar material can be inserted into a layer reserved for a metalinterconnect layer. Either plate of the functional polar material isconnected to a known voltage node via a clocked or gated transistor. Acharge integration node sharing one of the electrode of the capacitorsor functional polar materials is formed in a interconnect layer. Viasfor polar materials can be placed close to conductive vias in closeproximity This is unlike a traditional memory integration. The closeintegration of conductive vias with polar material via providesflexibility for logic and circuit design. The formation of the vias isaccomplished with a self-aligned backend of line integration, which insome cases uses EUV (extreme ultra violet) lithography. In someembodiments, polar functional material (e.g., non-linear dielectrics,para-electrics, FE) are co-located in the same interconnect layer as thecapacitors C1, C2, and C3. In some embodiments, polar functionalmaterial (e.g., non-linear dielectrics, para-electrics, FE) are notco-located in the same interconnect layer as the capacitors C1, C2, andC3. The polar material is contacted to the gates of a CMOS (or othertechnology) logic circuit 106 (e.g., NAND, NOR, buffer, inverter). TheFE cap 105 further comprises a material stack with conductiveinter-diffusion barrier, template starter, a polar material, and otherfunctional layers. The FE-Cap 105 may use a conductive pedestal andinsulating protective sidewalls.

FIG. 7 illustrates system-on-chip (SOC) 700 that uses the low voltagelogic gates, in accordance with some embodiments. SOC 700 comprisesmemory 701 having static random-access memory (SRAM) or FE based randomaccess memory FE-RAM, or any other suitable memory. The memory can benon-volatile (NV) or volatile memory. Memory 701 may also comprise logic703 to control memory 702. For example, write and read drivers are partof logic 703. These drivers and other logic are implemented using themajority or threshold gates of various embodiments. The logic cancomprise majority or threshold gates and traditional logic (e.g., CMOSbased NAND, NOR etc.).

SOC further comprises a memory I/O (input-output) interface 704. Theinterface may be double-data rate (DDR) compliant interface or any othersuitable interface to communicate with a processor. Processor 705 of SOC700 can be a single core or multiple core processor. Processor 705 canbe a general purpose processor (CPU), a digital signal processor (DSP),or an Application Specific Integrated Circuit (ASIC) processor. In someembodiments, processor 705 is an artificial intelligence (AI) processor(e.g., a dedicated AI processor, a graphics processor configured as anAI processor).

AI is a broad area of hardware and software computations where data isanalyzed, classified, and then a decision is made regarding the data.For example, a model describing classification of data for a certainproperty or properties is trained over time with large amounts of data.The process of training a model requires large amounts of data andprocessing power to analyze the data. When a model is trained, weightsor weight factors are modified based on outputs of the model. Onceweights for a model are computed to a high confidence level (e.g., 95%or more) by repeatedly analyzing data and modifying weights to get theexpected results, the model is deemed “trained.” This trained model withfixed weights is then used to make decisions about new data. Training amodel and then applying the trained model for new data is hardwareintensive activity. In some embodiments, AI processor 405 has reducedlatency of computing the training model and using the training model,which reduces the power consumption of such AI processor systems.

Processor 705 may be coupled to a number of other chip-lets that can beon the same die as SOC 700 or on separate dies. These chip-lets includeconnectivity circuitry 706, I/O controller 707, power management 708,and display system 709, and peripheral connectivity 710.

Connectivity 706 represents hardware devices and software components forcommunicating with other devices. Connectivity 706 may support variousconnectivity circuitries and standards. For example, connectivity 706may support GSM (global system for mobile communications) or variationsor derivatives, CDMA (code division multiple access) or variations orderivatives, TDM (time division multiplexing) or variations orderivatives, 3rd Generation Partnership Project (3GPP) Universal MobileTelecommunications Systems (UMTS) system or variations or derivatives,3GPP Long-Term Evolution (LTE) system or variations or derivatives, 3GPPLTE-Advanced (LTE-A) system or variations or derivatives, FifthGeneration (5G) wireless system or variations or derivatives, 5G mobilenetworks system or variations or derivatives, 5G New Radio (NR) systemor variations or derivatives, or other cellular service standards. Insome embodiments, connectivity 706 may support non-cellular standardssuch as WiFi.

I/O controller 707 represents hardware devices and software componentsrelated to interaction with a user. I/O controller 707 is operable tomanage hardware that is part of an audio subsystem and/or displaysubsystem. For example, input through a microphone or other audio devicecan provide input or commands for one or more applications or functionsof SOC 700. In some embodiments, I/O controller 707 illustrates aconnection point for additional devices that connect to SOC 700 throughwhich a user might interact with the system. For example, devices thatcan be attached to the SOC 700 might include microphone devices, speakeror stereo systems, video systems or other display devices, keyboard orkeypad devices, or other I/O devices for use with specific applicationssuch as card readers or other devices.

Power management 708 represents hardware or software that perform powermanagement operations, e.g., based at least in part on receivingmeasurements from power measurement circuitries, temperature measurementcircuitries, charge level of battery, and/or any other appropriateinformation that may be used for power management. By using majority andthreshold gates of various embodiments, non-volatility is achieved atthe output of these logic. Power management 708 may accordingly put suchlogic into low power state without the worry of losing data. Powermanagement may select a power state according to Advanced Configurationand Power Interface (ACPI) specification for one or all components ofSOC 700.

Display system 709 represents hardware (e.g., display devices) andsoftware (e.g., drivers) components that provide a visual and/or tactiledisplay for a user to interact with the processor 705. In someembodiments, display system 709 includes a touch screen (or touch pad)device that provides both output and input to a user. Display system 709may include a display interface, which includes the particular screen orhardware device used to provide a display to a user. In someembodiments, the display interface includes logic separate fromprocessor 705 to perform at least some processing related to thedisplay.

Peripheral connectivity 710 may represent hardware devices and/orsoftware devices for connecting to peripheral devices such as printers,chargers, cameras, etc. Peripheral connectivity 710 say supportcommunication protocols, e.g., PCIe (Peripheral Component InterconnectExpress), USB (Universal Serial Bus), Thunderbolt, High DefinitionMultimedia Interface (HDMI), Firewire, etc.

Reference in the specification to “an embodiment,” “one embodiment,”“some embodiments,” or “other embodiments” means that a particularfeature, structure, or characteristic described in connection with theembodiments is included in at least some embodiments, but notnecessarily all embodiments. The various appearances of “an embodiment,”“one embodiment,” or “some embodiments” are not necessarily allreferring to the same embodiments. If the specification states acomponent, feature, structure, or characteristic “may,” “might,” or“could” be included, that particular component, feature, structure, orcharacteristic is not required to be included. If the specification orclaim refers to “a” or “an” element, that does not mean there is onlyone of the elements. If the specification or claims refer to “anadditional” element, that does not preclude there being more than one ofthe additional elements.

Furthermore, the particular features, structures, functions, orcharacteristics may be combined in any suitable manner in one or moreembodiments. For example, a first embodiment may be combined with asecond embodiment anywhere the particular features, structures,functions, or characteristics associated with the two embodiments arenot mutually exclusive.

While the disclosure has been described in conjunction with specificembodiments thereof, many alternatives, modifications and variations ofsuch embodiments will be apparent to those of ordinary skill in the artin light of the foregoing description. The embodiments of the disclosureare intended to embrace all such alternatives, modifications, andvariations as to fall within the broad scope of the appended claims.

In addition, well-known power/ground connections to integrated circuit(IC) chips and other components may or may not be shown within thepresented figures, for simplicity of illustration and discussion, and soas not to obscure the disclosure. Further, arrangements may be shown inblock diagram form in order to avoid obscuring the disclosure, and alsoin view of the fact that specifics with respect to implementation ofsuch block diagram arrangements are highly dependent upon the platformwithin which the present disclosure is to be implemented (i.e., suchspecifics should be well within purview of one skilled in the art).Where specific details (e.g., circuits) are set forth in order todescribe example embodiments of the disclosure, it should be apparent toone skilled in the art that the disclosure can be practiced without, orwith variation of, these specific details. The description is thus to beregarded as illustrative instead of limiting.

Following examples are provided that illustrate the various embodiments.The examples can be combined with other examples. As such, variousembodiments can be combined with other embodiments without changing thescope of the invention.

Example 1: An apparatus comprising: a node; a first capacitor having afirst terminal to receive a first input, and a second terminal coupledto the node; a second capacitor having a first terminal to receive asecond input, and a second terminal coupled to the node; a thirdcapacitor having a first terminal to receive a third input, and a secondterminal coupled to the node; a logic having an input and an output; anda capacitor comprising non-linear polar material, wherein the capacitorincludes a first terminal coupled to the node and a second terminalcoupled to the input of the logic.

Example 2: The apparatus of example 1, wherein the first, second, andthird capacitors are non-ferroelectric capacitors.

Example 3: The apparatus of example 2, wherein the non-ferroelectriccapacitors includes one of: a dielectric capacitor, para-electriccapacitor, or non-linear dielectric capacitor.

Example 4: The apparatus of example 1 comprises: a first transistorcoupled to the node, wherein first transistor is controllable by a firstclock; and a second transistor coupled to the input of the logic,wherein the second transistor is controllable by a second clock.

Example 5: The apparatus of example 4, wherein the second clock isdifferent from the first clock.

Example 6: The apparatus of example 4, wherein the second clock is thesame as the first clock.

Example 7: The apparatus of example 4, wherein the second clock is aninverse of the first clock.

Example 8: The apparatus of example 1 comprises: a first driver togenerate the first input; a second driver to generate the second input;and a third driver to generate the third input.

Example 9: The apparatus of example 5, wherein the first, second, andthird drivers comprise CMOS transistors.

Example 10: The apparatus of example 1, wherein the logic comprise oneor more of: a buffer, a CMOS inverter, a NAND gate, a NOR gate, amultiplexer.

Example 11: The apparatus of claim 1, wherein the first, second, andthird capacitors comprises one of: metal-insulator-metal (MIM)capacitor, transistor gate capacitor, hybrid of metal and transistorcapacitor; capacitor comprising para-electric material; non-lineardielectric capacitor, or linear dielectric capacitor.

Example 12: The apparatus of example 1, wherein the non-linear polarmaterial includes one of: ferroelectric material, para-electricmaterial, or non-linear dielectric.

Example 13: The apparatus of example 12, wherein the ferroelectricmaterial includes one of: Bismuth ferrite (BFO), BFO with a dopingmaterial where in the doping material is one of Lanthanum, or elementsfrom lanthanide series of periodic table; Lead zirconium titanate (PZT),or PZT with a doping material, wherein the doping material is one of La,Nb; a relaxor ferroelectric includes one of lead magnesium niobate(PMN), lead magnesium niobate-lead titanate (PMN-PT), lead lanthanumzirconate titanate (PLZT), lead scandium niobate (PSN), BariumTitanium-Bismuth Zinc Niobium Tantalum (BT-BZNT), Barium Titanium-BariumStrontium Titanium (BT-BST); perovskite includes one of: BaTiO3, PbTiO3,KNbO3, or NaTaO3; hexagonal ferroelectric includes one of: YMnO3, orLuFeO3; hexagonal ferroelectrics of a type h-RMnO3, where R is a rareearth element viz. cerium (Ce), dysprosium (Dy), erbium (Er), europium(Eu), gadolinium (Gd), holmium (Ho), lanthanum (La), lutetium (Lu),neodymium (Nd), praseodymium (Pr), promethium (Pm), samarium (Sm),scandium (Sc), terbium (Tb), thulium (Tm), ytterbium (Yb), or yttrium(Y); Hafnium (Hf), Zirconium (Zr), Aluminum (Al), Silicon (Si), theiroxides or their alloyed oxides; Hafnium oxides of the form, Hf1−x Ex Oywhere E can be Al, Ca, Ce, Dy, er, Gd, Ge, La, Sc, Si, Sr, Sn, Y;Al(1−x)Sc(x)N, Ga(1−x)Sc(x)N, Al(1−x)Y(x)N or Al(1−x-y)Mg(x)Nb(y)N, ydoped HfO2, where x includes one of: Al, Ca, Ce, Dy, Er, Gd, Ge, La, Sc,Si, Sr, Sn, or Y, wherein ‘x’ is a fraction; Niobate type compoundsLiNbO3, LiTaO3, Lithium iron Tantalum Oxy Fluoride, Barium StrontiumNiobate, Sodium Barium Niobate, Potassium strontium niobate; or improperferroelectric includes one of: [PTO/STO]n or [LAO/STO]n, where ‘n’ isbetween 1 to 100.

Example 14: The apparatus of example 1, wherein the capacitor comprisingnon-linear polar material is positioned in a backend of a die, andwherein the logic is positioned in a frontend of the die.

Example 15: The apparatus of example 1, wherein the first, second, andthird inputs are digital inputs, analog inputs, or a combination ofthem.

Example 16: An apparatus comprising: first, second, and third drivers togenerate first, second, and third digital signals, respectively; first,second, and third non-ferroelectric capacitors to receive the first,second, and third digital signals, respectively; a node to sum chargesof the first, second, and third non-ferroelectric capacitors; aferroelectric capacitor to store the summed charge; and a CMOS logic todrive a voltage of the ferroelectric capacitor.

Example 17: The apparatus of example 16 comprising: a first pull-downdevice to discharge the node; and a second pull-down device to dischargean input of the CMOS logic.

Example 18: An apparatus comprising: a first circuitry to receive atleast three digital signals and apply linear summation to the at leastthree digital signals, and generate a summed output; and a device toreceive the summed output and apply non-linear function via a non-linearpolar material, wherein the device to generate a non-linear outputcompared to the summed output; and a third circuitry to convert thenon-linear output to a digital output.

Example 19: The apparatus of example 18, wherein the first circuitrycomprises first, second, and third non-ferroelectric capacitors toreceive the at least three digital signals, respectively.

Example 20: The apparatus of example 18, wherein non-linear polarmaterial stores the summed output, wherein the non-linear polar materialincludes one of: ferroelectric material, para-electric material, ornon-linear dielectric.

Example 21: The apparatus of example 18, wherein the third circuitrycomprises one of: a buffer, an inverter, a NAND gate, or NOR gate, or amultiplexer.

Example 22: A system comprising: a processor; a communication interfacecommunicatively coupled to the processor; and a memory coupled to theprocessor, wherein the processor comprises a majority gate logic whichincludes: a node; a first capacitor having a first terminal to receive afirst digital input, and a second terminal coupled to the node; a secondcapacitor having a first terminal to receive a second digital input, anda second terminal coupled to the node; a third capacitor having a firstterminal to receive a third digital input, and a second terminal coupledto the node; and a capacitor comprising ferroelectric material, whereinthe capacitor includes a first terminal coupled to the node; wherein theprocessor includes: a logic having an input and an output, wherein thecapacitor includes a second terminal coupled to the input of the logic.

Example 23: The system of example 22, wherein the processor is one of anaccelerator or an artificial intelligence (AI) processor.

Example 24: The system of example 22 comprising a first Boolean driverto generate the first digital input; a second Boolean driver to generatethe second digital input; and a third Boolean driver to generate thethird digital input.

An abstract is provided that will allow the reader to ascertain thenature and gist of the technical disclosure. The abstract is submittedwith the understanding that it will not be used to limit the scope ormeaning of the claims. The following claims are hereby incorporated intothe detailed description, with each claim standing on its own as aseparate embodiment.

We claim:
 1. An apparatus comprising: a node; a first capacitor having afirst terminal to receive a first input, and a second terminal coupledto the node; a second capacitor having a first terminal to receive asecond input, and a second terminal coupled to the node; a thirdcapacitor having a first terminal to receive a third input, and a secondterminal coupled to the node, wherein the first capacitor, the secondcapacitor and the third capacitor comprise a ferroelectric materialwhich is doped; and a logic having an input and an output, wherein theinput of the logic is coupled to the node, wherein the input of thelogic has capacitance, and wherein the ferroelectric material is dopedwith an f-orbital material.
 2. The apparatus of claim 1 comprising afourth capacitor which includes a first terminal coupled to the node anda second terminal coupled to the input of the logic.
 3. The apparatus ofclaim 2, wherein the fourth capacitor comprises non-linear polarmaterial.
 4. The apparatus of claim 1 comprising: a first transistorcoupled to the node and ground, wherein the first transistor iscontrollable by a first control; and a second transistor coupled to theinput of the logic and the ground, wherein the second transistor iscontrollable by a second control.
 5. The apparatus of claim 1,comprising: a first driver to generate the first input; a second driverto generate the second input; and a third driver to generate the thirdinput.
 6. The apparatus of claim 3, wherein the non-linear polarmaterial includes one of: a ferroelectric material, a para electricmaterial or a non-linear dielectric.
 7. The apparatus of claim 6,wherein the ferroelectric material includes one of: Bismuth ferrite(BFO) with a doping material wherein the doping material is one ofLanthanum, or elements from lanthanide series of periodic table; Leadzirconium titanate (PZT), or PZT with a doping material, wherein thedoping material is one of La or Nb; a relaxor ferroelectric whichincludes one of lead magnesium niobate (PMN), lead magnesiumniobate-lead titanate (PMN-PT), lead lanthanum zirconate titanate(PLZT), lead scandium niobate (PSN), Barium Titanium-Bismuth ZincNiobium Tantalum (BT-BZNT), or Barium Titanium-Barium Strontium Titanium(BT-BST); a perovskite which includes one of: BaTiO3, PbTiO3, KNbO3, orNaTaO3; a hexagonal ferroelectric which includes one of: YMnO3 orLuFeO3; hexagonal ferroelectrics of a type h-RMnO3, where R is a rareearth element including one or more of: cerium (Ce), dysprosium (Dy),erbium (Er), europium (Eu), gadolinium (Gd), holmium (Ho), lanthanum(La), lutetium (Lu), neodymium (Nd), praseodymium (Pr), promethium (Pm),samarium (Sm), scandium (Sc), terbium (Tb), thulium (Tm), ytterbium(Yb), or yttrium (Y); Hafnium (Hf), Zirconium (Zr), Aluminum (Al),Silicon (Si), their oxides or their alloyed oxides; Hafnium oxides of aform, Hf1−x Ex Oy where E can be Al, Ca, Ce, Dy, Er, Gd, Ge, La, Sc, Si,Sr, Sn, or Y; Al(1−x)Sc(x)N, Ga(1−x)Sc(x)N, Al(1−x)Y(x)N orAl(1−x−y)Mg(x)Nb(y)N, y doped HfO2, where x includes one of: Al, Ca, Ce,Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn, or Y, and wherein ‘x’ is a fraction;Niobate type compounds LiNbO3, LiTaO3, Lithium iron Tantalum OxyFluoride, Barium Strontium Niobate, Sodium Barium Niobate, or Potassiumstrontium niobate; or an improper ferroelectric which includes one of:[PTO/STO]n or [LAO/STO]n, where ‘n’ is between 1 to
 100. 8. Theapparatus of claim 3, wherein the fourth capacitor comprising non-linearpolar material is positioned in a backend of a die, and wherein thelogic is positioned in a frontend of the die.
 9. The apparatus of claim1, wherein the ferroelectric material, which is doped, is a roomtemperature paraelectric material.
 10. The apparatus of claim 9, whereinthe room temperature paraelectric material includes one of: SrTiO₃,Ba_(x)Sr_(y)TiO₃, HfZrO₂, HfSiO, La substituted PbTiO3, or PMN-PT basedrelaxor ferroelectric.
 11. An apparatus comprising: a node; a firstcapacitor having a first terminal to receive a first input, and a secondterminal coupled to the node; a second capacitor having a first terminalto receive a second input, and a second terminal coupled to the node; athird capacitor having a first terminal to receive a third input, and asecond terminal coupled to the node, wherein the first capacitor, thesecond capacitor and the third capacitor comprise a room temperatureparaelectric material; and a logic having an input and an output,wherein the input of the logic is coupled to the node, and wherein theinput of the logic has capacitance.
 12. The apparatus of claim 11,wherein the room temperature paraelectric material includes one of:SrTiO₃, Ba_(x)Sr_(y)TiO₃, HfZrO₂, HfSiO, La substituted PbTiO3, orPMN-PT based relaxor ferroelectric.
 13. The apparatus of claim 11comprising: a first transistor coupled to the node and ground, whereinthe first transistor is controllable by a first control; and a secondtransistor coupled to the input of the logic and the ground, wherein thesecond transistor is controllable by a second control.
 14. The apparatusof claim 11 comprising a fourth capacitor which includes a firstterminal coupled to the node and a second terminal coupled to the inputof the logic.
 15. The apparatus of claim 14, wherein the fourthcapacitor comprises non-linear polar material.
 16. A system comprising:a memory; a processor circuitry to execute one or more instructions; anda communication interface to allow the processor circuitry tocommunicate with another device, wherein the processor circuitryincludes: a node; a first capacitor having a first terminal to receive afirst input, and a second terminal coupled to the node; a secondcapacitor having a first terminal to receive a second input, and asecond terminal coupled to the node; a third capacitor having a firstterminal to receive a third input, and a second terminal coupled to thenode, wherein the first capacitor, the second capacitor and the thirdcapacitor comprise a non-linear material; and a logic having an inputand an output, wherein the input of the logic is coupled to the node,wherein the input of the logic has capacitance, and wherein theprocessor circuitry comprising: a first transistor coupled to the nodeand ground, wherein the first transistor is controllable by a firstcontrol; and a second transistor coupled to the input of the logic andthe ground, wherein the second transistor is controllable by a secondcontrol.
 17. The system of claim 16, wherein the non-linear material isa room temperature paraelectric material including one of: SrTiO₃,Ba_(x)Sr_(y)TiO₃, HfZrO₂, HfSiO, La substituted PbTiO3, or PMN-PT basedrelaxor ferroelectric.
 18. The system of claim 16 comprising a fourthcapacitor which includes a first terminal coupled to the node and asecond terminal coupled to the input of the logic.